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    GaN Based Power Device Market Report

    GaN Based Power Device Market Report
    Report code - SR1599 Delivery - 2 Weeks
    GaN Based Power Device Market Size, Share, Trend, Forecast, & Industry Analysis: 2021- See more...

    Market Insights

    The GaN Based Power Device Market is estimated to grow from USD 119.3 million in 2020 to USD 719.7 million by 2026 at a healthy CAGR of 35.8% during the forecast period.

    GaN-Based-Power-Device-Market-Size

    What is GaN Based Power Device?

    Gallium nitride (GaN) transistors have evolved as a stronger performance substitute of silicon-based transistors, thanks to their ability to fabricate more compact devices for a given resistance value & breakdown voltage as compared to silicon devices. These power devices can reach high-frequency switching and intensely low resistance. These properties are employed in high-efficiency power supplies, photovoltaic inverters, hybrid electric vehicles (HEV), and RF switching.

    Market Drivers

    The GaN-based power device market is mainly driven by surging demand for GaN in radio frequency equipment and growing product adoption in the telecommunication industry. In addition, rising demand for AC fast chargers, wireless power, and LiDAR, further bolster market growth. Also, these devices are more beneficial than silicon devices. Furthermore, the growing requirement of GaN power devices in electric & hybrid vehicles offers immense growth opportunities to the industry players in the following years.

    Covid-19 Impact Analysis

    The outbreak of COVID-19 has negatively impacted the GaN based power device industry mainly due to lockdowns imposed by the governments around the world, which resulted in shut down of offices, educational institutes & other public meeting places and travel restrictions. Furthermore, due to the closure of office spaces, the employees have started working from home and are depended on video conferencing to conduct discussions & run daily operations.

    GaN-Based-Power-Device-Market-Snapshot

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    Key Players

    Key players operating in the global GaN Based Power Device Market are-

    • Cree (US)
    • Navitas Semiconductor (US)
    • Texas Instruments (US)
    • TOSHIBA (Japan)
    • Sumitomo Electric (Japan)
    • Mitsubishi Electric (Japan)
    • GaN Systems (Canada)
    • Infineon (Germany)
    • Ampleon (Netherlands)
    • EpiGaN (Belgium)

    Segment Analysis

    End Use Trends

    Based on end-use, the GaN-based power device market has been classified into automotive, consumer electronics, aerospace & defense, medical, information communication & technology, others. The information communication & technology segment accounted for the largest market share of more than 22% in 2020. This is mainly attributed to the growing adoption of the Internet of Things (IoT) technology. IoT devices demand cost-effective and efficient components which facilitate a constant exchange of information.

    Regional Trends

    By region, the North American GaN Based Power Device market accounted for the largest share of almost 33% in 2020 and is expected to grow at a significant CAGR during the review period. The GaN Based Power Device market growth is mainly propelled by rising investments by the defense & aerospace industry in R&D. Also, the governments in the region are encouraging the adoption of energy-efficient devices and are offering contracts to different companies, further bolstering the regional market growth.

    The Asia-Pacific GaN Based Power Device market is expected to grow at the highest CAGR of more than 8% during the review period. The regional growth is ascribed to rapid technological advancements which are resulting in an increased demand for efficient & high-performance RF components. China and Japan are some of the largest manufacturers of consumer electronics, such as smartphones, LED display devices, and gaming consoles, among others, thereby boosting the regional market growth.

    Research Methodology

    This report offers high-quality insights and is the outcome of detailed research methodology comprising extensive secondary research, rigorous primary interviews with industry stakeholders and validation and triangulation with Stratview Research’s internal database and statistical tools. More than 1,000 authenticated secondary sources, such as company annual reports, fact book, press release, journals, investor presentation, white papers, patents, and articles have been leveraged to gather the data. We conducted more than 10 detailed primary interviews with the market players across the value chain in all four regions and with industry experts to obtain both the qualitative and quantitative insights.

    Report Features

    This report provides market intelligence in the most comprehensive way. The report structure has been kept such that it offers maximum business value. It provides critical insights into the market dynamics and will enable strategic decision making for the existing market players as well as those willing to enter the market. The following are the key features of the report:

    • Market structure: Overview, industry life cycle analysis, supply chain analysis
    • Market environment analysis: Growth drivers and constraints, Porter’s five forces analysis, SWOT analysis
    • Market trend and forecast analysis
    • Market segment trend and forecast
    • Competitive landscape and dynamics: Market share, product portfolio, product launches, etc.
    • Attractive market segments and associated growth opportunities
    • Emerging trends
    • Strategic growth opportunities for the existing and new players
    • Key success factors

    Target Audience

    The target audience of GaN Based Power Device Market includes-

    • GaN Based Power Device Vendors
    • GaN Based Power Device Manufacturers
    • GaN Based Power Device Distributors
    • Organizations
    • Government Bodies.

    Custom Research: Stratview research offers custom research services across sectors. In case of any custom research requirement related to market assessment, competitive benchmarking, sourcing and procurement, target screening, and others, please send your inquiry at sales@stratviewresearch.com.

    Frequently Asked Questions (FAQs)

    The GaN based power device market is expected to witness an impressive growth of 35.8% CAGR in the coming year.

    Cree (US), Navitas Semiconductor (US), Texas Instruments (US), TOSHIBA (Japan), Sumitomo Electric (Japan), Mitsubishi Electric (Japan), GaN Systems (Canada), Infineon (Germany), Ampleon (Netherlands), EpiGaN (Belgium) are among the key players in the market.

    The GaN based power device market size is expected to reach USD 719.7 million in the foreseeable future.

    The information communication & technology segment accounted for the largest share in the market in 2020.

    Asia-pacific is expected to grow at the highest CAGR in the market in the next five years.

    GaN Based Power Device Vendors, GaN Based Power Device Manufacturers, GaN Based Power Device Distributors, Organizations, Government Bodies are the target audience in the market.