GaN Based Power Device Market Size, Share, Trend, Forecast, Competitive Analysis, and Growth Opportunity: 2021-2026
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GaN Based Power Device Market Size, Share, Trend, Forecast, Competitive Analysis, and Growth Opportunity: 2021-2026
GaN Based Power Device Market is segmented by DeviceType (GaN Power Discrete Devices, GaN Power ICs, and GaN Power Module), by End-Use Type (Automotive, Consumer Electronics, Aerospace & Defense, Medical, Information Communication & Technology, and Others), and by Region (North America [The USA, Canada, and Mexico], Europe [Germany, France, The U.K., Russia, and Rest of Europe], Asia-Pacific [China, Japan, India, South Korea, and Rest of Asia-Pacific], and Rest of the World [Brazil, Saudi Arabia, Israel, and Others]) - COVID-19 Impact Analysis and Forecast to 2026.
GaN Based Power Device Market is segmented by Device...
“The GaN Based Power Device Market is expected to grow from USD 119.3 million in 2020 to USD 719.7 million by 2026 at an impressive CAGR of 35.8% during the forecast period”.
Gallium nitride (GaN) transistors have evolved as a stronger performance substitute for silicon-based transistors, thanks to their ability to fabricate more compact devices for a given resistance value & breakdown voltage as compared to silicon devices.
These power devices can reach high-frequency switching and intensely low resistance. These properties are employed in high-efficiency power supplies, photovoltaic inverters, hybrid electric vehicles (HEV), and RF switching.
Market Drivers
The GaN based power device market is mainly driven by surging demand for GaN in radio frequency equipment and growing product adoption in the telecommunication industry. In addition, rising demand for AC fast chargers, wireless power, and LiDAR, further bolsters market growth. Also, these devices are more beneficial than silicon devices.
Furthermore, the growing requirement for GaN power devices in electric & hybrid vehicles offers immense growth opportunities to the industry players in the following years.
COVID-19 Impact
The outbreak of COVID-19 has negatively impacted the GaN based power device industry mainly due to lockdowns imposed by the governments around the world, which resulted in shut shutdown of offices, educational institutes & other public meeting places, and travel restrictions.
Furthermore, due to the closure of office spaces, the employees have started working from home and are dependent on video conferencing to conduct discussions & run daily operations.
Segments Analysis
Segmentations
List of Sub-Segments
Dominant and Fastest-Growing Segments
End-Use-Type Analysis
Automotive, Consumer Electronics, Aerospace & Defense, Medical, Information Communication & Technology, and Others
The information communication & technology dominated the market share in 2020.
Regional Analysis
North America, Europe, Asia-Pacific, and Rest of the World
North America is expected to remain the largest market for GaN-based power device.
By End-Use Type
“The information communication & technology dominated the market share in 2020”.
The GaN-based power device market has been segmented into automotive, consumer electronics, aerospace & defense, medical, information communication & technology, and others. The information communication & technology segment accounted for the largest market share of more than 20% in 2020.
This is mainly attributed to the growing adoption of the Internet of Things (IoT) technology. IoT devices demand cost-effective and efficient components that facilitate a constant exchange of information.
Regional Analysis
“North America dominated the 2020 GaN Based Power Device market, with Asia-Pacific expected to show the highest growth rate”.
The market is broken down geographically into areas, namely North America, Europe, Asia-Pacific, and the Rest of the World (RoW). In terms of region, the North American GaN Based Power Device market accounted for the largest share of more than 30% in 2020 and is expected to grow at a significant CAGR during the forecast period.
The market growth is mainly propelled by rising investments by the defense & aerospace industry in R&D. Also, the governments in the region are encouraging the adoption of energy-efficient devices and are offering contracts to different companies, further bolstering the regional market growth.
Asia-Pacific is expected to grow at the highest CAGR of more than 5% during the forecast period. The regional growth is ascribed to rapid technological advancements which are resulting in an increased demand for efficient & high-performance RF components. China and Japan are some of the largest manufacturers of consumer electronics, such as smartphones, LED display devices, and gaming consoles, among others, thereby boosting the regional market growth.
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Key Players
The following are the key players in the GaN Based Power Device Market (arranged alphabetically)
Ampleon (Netherlands)
Cree (US)
EpiGaN (Belgium)
GaN Systems (Canada)
Infineon (Germany)
Mitsubishi Electric (Japan)
Navitas Semiconductor (US)
Sumitomo Electric (Japan)
TOSHIBA (Japan)
Texas Instruments (US)
Note: The above list does not necessarily include all the top players in the market.
Are you the leading player in this market? We would love to include your name. Write to us at sales@stratviewresearch.coma
Report Features
This report provides market intelligence in the most comprehensive way. The report structure has been kept such that it offers maximum business value. It provides critical insights into the market dynamics and will enable strategic decision-making for the existing market players as well as those willing to enter the market.
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Key questions this report answers
Relevant contents in the report
How big is the sales opportunity?
In-depth Analysis of the GaN Based Power Device Market
How lucrative is the future?
The market forecast and trend data and emerging trends
Which regions offer the best sales opportunities?
Global, regional, and country-level historical data and forecasts
Which are the most attractive market segments?
Market segment analysis and Forecast
Which are the top players and their market positioning?
Porter’s five forces analysis, PEST analysis, Life cycle analysis
What are the factors affecting the market?
Drivers & challenges
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10% free customization
Research Methodology
This report offers high-quality insights and is the outcome of a detailed research methodology comprising extensive secondary research, rigorous primary interviews with industry stakeholders, and validation and triangulation with Stratview Research’s internal database and statistical tools.
More than 1,000 authenticated secondary sources, such as company annual reports, fact books, press releases, journals, investor presentations, white papers, patents, and articles have been leveraged to gather the data.
We conducted more than 15 detailed primary interviews with the market players across the value chain in all four regions and with industry experts to obtain both qualitative and quantitative insights.
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Cree (US), Navitas Semiconductor (US), Texas Instruments (US), TOSHIBA (Japan), Sumitomo Electric (Japan), Mitsubishi Electric (Japan), GaN Systems (Canada), Infineon (Germany), Ampleon (Netherlands), EpiGaN (Belgium) are among the key players in the market.